RT Journal Article
A1 Z.G. Lu
A1 P.J. Poole
A1 J.R. Liu
A1 P.J. Barrios
A1 Z.J. Jiao
A1 G. Pakulski
A1 D. Poitras
A1 D. Goodchild
A1 B. Rioux
A1 A.J. SpringThorpe

PB iet
T1 High-performance 1.52 µm InAs/InP quantum dot distributed feedback laser
JN Electronics Letters
VO 47
IS 14
SP 818
OP 819
AB A high performance ridge-waveguide InAs/InP quantum dot distributed feedback laser around 1.52 µm with a cavity length of 1 mm and a stripe width of 3 µm is demonstrated. In continuous-wave operation singlemode output power was up to 18.5 mW and its sidemode suppression ratio was greater than 62 dB. The relative intensity noise was measured to be less than −154 dB/Hz from 10 MHz to 10 GHz, and the optical linewidth smaller than 150 kHz when the injection current was 200 mA at room temperature of 18°C.
K1 temperature 18 degC
K1 InAs-InP
K1 wavelength 1.52 mum
K1 size 1 mm
K1 high-performance quantum dot distributed feedback laser
K1 size 3 mum
K1 frequency 10 MHz to 10 GHz
K1 ridge-waveguide quantum dot distributed feedback laser
K1 current 200 mA
DO https://doi.org/10.1049/el.2011.0946
UL https://digital-library.theiet.org/;jsessionid=7f7erasrvqims.x-iet-live-01content/journals/10.1049/el.2011.0946
LA English
SN 0013-5194
YR 2011
OL EN