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Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model

Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model

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  • Author(s): I.M. Kang 1  and  H. Shin 2
    • View affiliations
    • Affiliations: 1: School of Electronics Engineering, Kyungpook National University, Daegu, Korea
      2: School of Electrical Engineering, Seoul National University, Seoul, Korea
  • Source: Volume 46, Issue 11, 27 May 2010, p. 784 – 786
    DOI:  10.1049/el.2010.0763 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
Published

A new extraction method of substrate resistances for radio-frequency MOSFETs is presented. Analytical equations for parameter extractions are derived by Y-parameter analysis for the cross-type substrate network. The cross-type substrate network is the substrate architecture in the PSP model. Accuracy of the extraction method is verified by MOSFETs fabricated by 130 nm RF CMOS technology.

Inspec keywords: CMOS integrated circuits; MOSFET

Other keywords: size 130 nm; Y-parameter analysis; PSP model; extraction method; RF CMOS technology; RF MOSFET; cross-type substrate resistance; radio-frequency MOSFET

Subjects: CMOS integrated circuits; Insulated gate field effect transistors

References

    1. 1)
      • J. Han , M. Je , H. Shin . A simple and accurate method for extracting substrate resistance of RF MOSFETs. IEEE Electron Device Lett. , 7 , 434 - 436
    2. 2)
      • Koolen, M.C.A.M., Geelen, J.A.M., Versleijen, M.P.J.G.: `An improved de-embedding technique for on-wafer high-frequency characterization', IEEE Bipolar Circuits and Technique Meeting, September 1991, Minneapolis, MN, USA, p. 188–191.
    3. 3)
      • Parvais, B., Hu, S., Dehan, M., Mercha, A., Decoutere, S.: `An accurate scalable compact model for the substrate resistance of RF MOSFETs', IEEE Custom Integrated Circuits Conf., 2007, San Jose, CA, USA, p. 503–506.
    4. 4)
      • I.M. Kang , J.D. Lee , H. Shin . Extraction of π-type substrate resistance based on three-port measurement and the model verification up to 110 GHz. IEEE Electron Device Lett. , 5 , 425 - 427
    5. 5)
      • S.D. Wu , G.W. Huang , K.M. Chen , C.Y. Chang , H.C. Tseng , T.L. Hsu . Extraction of substrate parameters for RF MOSFETs based on four-port measurement. IEEE Microw. Wirel. Compon. Lett. , 6 , 437 - 439
    6. 6)
      • M. Kang , I.M. Kang , Y.H. Jung , H. Shin . Separate extraction of gate resistance components in RF MOSFETs. IEEE Trans. Electron Devices , 6 , 1459 - 1463
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