InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications

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InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications

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A modulator driver module for use in 100 Gbit/s optical data communication systems has been developed using an InP DHBT-based distributed amplifier chip and 50 Ω microstrip lines on quartz substrate. The module achieved a gain of 16 dB and a 3 dB bandwidth of 110 GHz. Clearly open 100 and 112 Gbit/s 231−1 non-return-to-zero pseudorandom bit sequence eye diagrams with an output voltage swing of 2.2 Vpp have been measured.

Inspec keywords: microstrip lines; heterojunction bipolar transistors; local area networks; optical communication; indium compounds

Other keywords: gain 16 dB; voltage 2.2 V; DHBT-based modulator driver module; bit rate 100 Gbit/s; microstrip line; Ethernet; optical data communication system; InP; distributed amplifier chip; bit rate 112 Gbit/s; bandwidth 110 GHz; double heterojunction bipolar transistor

Subjects: Local area networks; Optical communication; Bipolar transistors; Computer communications

References

    1. 1)
      • Derksen, R.H., Moeller, M., Schubert, C.: `100-Gbit/s full-ETDM transmission technologies', Tech. Dig. IEEE CSIC Symp., 2007, Portland, OR, USA, p. 89–92.
    2. 2)
      • V. Hurm , F. Benkhelifa , R. Driad , R. Lösch , R. Makon , H. Massler , J. Rosenzweig , M. Schlechtweg , H. Walcher . InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation. Electron. Lett. , 12 , 705 - 706
    3. 3)
      • G. Veith , E. Lach , K. Schuh . 100 gigabit-per-second, ultra-high transmission bitrate for next generation optical transport networks. C. R. Acad. Sci., Ser IV Phys. Astrophys. , 1002 - 1011
    4. 4)
      • M. Chaciński , U. Westergren , B. Willén , B. Stoltz , L. Thylén . Electroabsorption modulators suitable for 100-Gb/s Ethernet. IEEE Electron Device Lett. , 9 , 1014 - 1016
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2009.1569
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