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Terahertz imaging with bow-tie InGaAs-based diode with broken symmetry

Terahertz imaging with bow-tie InGaAs-based diode with broken symmetry

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© The Institution of Engineering and Technology
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A silicon-lens coupled bow-tie InGaAs-based diode with broken symmetry is demonstrated for terahertz imaging applications below 1 THz at room temperature. Transient features and the dynamic range of the bow-tie InGaAs-based sensor are explored experimentally, proving the possibility to use the device in real-time imaging systems. Response time is found to be less than 7 ns, responsivity of 0.1 mA/W, and noise equivalent power of 5.8 nW/√Hz.

Inspec keywords: terahertz wave imaging; submillimetre wave imaging; III-V semiconductors; indium compounds; semiconductor diodes

Other keywords: bow-tie InGaAs-based diode; InGaAs; terahertz imaging; broken symmetry

Subjects: Microwave measurement techniques; Junction and barrier diodes

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2009.0336
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