Strained Silicon Heterostructures: materials and devices
This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in silicon-heterostructure, material systems.
Inspec keywords: energy gap; field effect transistors; elemental semiconductors; molecular beam epitaxial growth; silicon; semiconductor heterojunctions; chemical vapour deposition
Other keywords: heterojunction bipolar transistors; ultrahigh vacuum chemical vapour deposition; quantum device; field effect transistors; materials characterisation; strained silicon heterostructures; molecular beam epitaxy; low temperature epitaxy; bandgap engineering; materials growth
Subjects: Electronic structure: density of states and band structure (condensed matter); Crystal growth from vapour; Semiconductor devices; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Vacuum deposition; Thin film growth, structure, and epitaxy; Semiconductor theory, materials and properties; Semiconductor junctions; Vacuum deposition
- Book DOI: 10.1049/PBCS012E
- Chapter DOI: 10.1049/PBCS012E
- ISBN: 9780852967782
- e-ISBN: 9781849191678
- Page count: 508
- Format: PDF
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Front Matter
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1 Introduction
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In this chapter, the development of different semiconductor devices such as bipolar junction transistors (BJTs), junction field effect transistors (FETs), metal oxide semiconductor field effect transistors (MOSFETs) etc using different semiconductor materias are discused. Electron devices employing heterojunctions are first demonstrated in III-V material systems such as AlGaAs-GaAs or InGaAs-InP which are lattice matched. GaAs diodes found applications as varactors, Gunn diodes and impact ionization avalanche transit time diodes (IMPATTs). The GaAs metal semiconductor field effect transistor (MESFET) is the first III-V compound semiconductor transistor. Meanwhile ternary compounds are developed and heterostructure diodes were fabricated which found a phenomenal success in diode lasers.
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2 Strained Layer Epitaxy
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In this chapter, the technology of growth of group-IV alloy films and their characterization is discussed. The deposition of heteroepitaxial films in greater depth using various reactors is also examined. Focus is placed on systems that have successfully demonstrated devices. Atmospheric pressure systems are also covered since they have a very great potential of widespread commercial use. As the reactor configurations differ substantially, the advantages and disadvantages of each system are compared. Wafer cleaning methods, reaction kinetics such as constituent incorporation control, dopant control, and selective deposition are examined. Characterization of strained epitaxial films using Rutherford backscattering spectroscopy analysis (RBS), x-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), high resolution x-ray diffractometry (HXRD) and atomic force microscopy (AFM) is discussed.
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3 Electronic Properties of Alloy Layers
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In a physical device the mobility of prime concern is drift mobility which for the bulk is measured typically by a time-of-flight method. Hall mobility provides an indirect estimate of the mobility behavior and is often a good indicator. Mobility in an actual MOS device is inferred indirectly from the current-voltage relation. Experimental results of electron and hole mobility in strained Si, SiGe and SiGeC are discussed and compared with predictions from simulation.
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4 Gate Dielectrics on Strained Layers
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In this chapter, processing issues of gate dielectric on SiGe and other strained layers in Si integrated circuits are addressed. The dielectrics for a surface channel SiGe MOSFET have been incorporated in a number of ways. One may oxidize the alloy or grow a Si cap on the alloy and oxidize it or deposit the dielectric on the alloy. Deposited oxides do not provide adequate quality for device fabrication. The problems examined in this chapter concern formation of ultrathin dielectrics on strained SiGe, strained Si and SiGeC layers. The present status of silicon dioxide formation on SiGe and related films using various techniques such as thermal, rapid thermal, and microwave/ECR plasma-assisted growth is reviewed. Results of studies on the low temperature (150-200 °C) growth of ultrathin oxides using microwave/ECR plasma in O2 and N2O/NO ambient, compositional analysis, electrical characterization and interfacial properties of the oxides are presented.
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5 SiGe Heterojunction Bipolar Transistors
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Fabrication and characterization of SiGe heterojunction bipolar transistors is reported. Complete MBE layer sequence is grown.
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6 Heterostructure Field Effect Transistors
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In this chapter, a review of the present status of the fabrication and characterization of Si HFETs in the Si/SiGe and SiGeC material systems is presented. Heterojunction MOSFETs may use a strained SiGe/SiGeC channel or strained Si or strained Ge channel. The substrate for a compressively (tensilely) strained channel would have a lower (larger) lattice constant. The channels may lie on the surface or be buried. The other freedom is to use a vertical channel. The choice of the cap layer for a buried SiGe channel is an important issue having bearing on the performance of the device. A brief discussion of design considerations is given.
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7 BICFET, RTD and Other Devices
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RTDs and BICFETs are discussed in this chapter. Although many other devices have been reported using SiGe strained layers, the work that has been done is not extensive and their performances have not yet reached a high level.
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8 MODFETs
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In this chapter, an overview of the concept of modulation doping, reported results for SiGe channel p-MODFETs, strained Si nand p-MOSFETs and MODFETs will be presented. Issues related to material growth and the electrical transport properties of both electrons and holes in strained Si have been discussed in Chapters 2 and 3. This chapter will also cover the technology of fabrication of MODFETs and HMOSFETs with strained Si, strained Ge and strained SiGe channels, the performances attained and possible applications. The state-of-the-art proposed HCMOS is also presented in this chapter.
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9 Contact Metallization on Strained Layers
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In this chapter, the formation and characterization of silicides (using Pt, Pd, Ir and Ti on SiGe and SiGeC) using various analytical tools such as x ray diffraction, Rutherford backscattering and Auger electron spectroscopy will be discussed. We describe Schottky barrier diodes using Ti, Pt and Pd on p-type SiGe, SiGeC, strained Si and GeC films. Experimental results on barrier heights, ideality factor and energy distribution of the interface state density for various diodes and simulation results on forward current-voltage characteristics of Schottky diodes on strained Si are presented.
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10 Si/SiGe Optoelectronics
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In this chapter, we present an overview of trends and progress made in group-IV heterostructures for optoelectronics. Topics will include devices demonstrated using SiGe, SiGeC (an alloy that can be lattice matched to Si), and direct bandgap, strained heterostructures of GeSn upon SiGe/Si. We shall focus on monolithic optoelectronic integration, a technique that promises low cost, reliable, high performance silicon-based optoelectronic integrated circuits (OEICs). In general, OEICs contain both passive guided-wave components, such as bends, splitters, couplers, and detectors, and active or controlled elements such as laser diodes, routers, switches and modulators.
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Back Matter
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