Semiconductor material systems can be categorized into silicon-based and III-V-compound-semiconductor-based devices. Silicon-based semiconductor devices, with their low-cost, high-volume production, have improved frequency response significantly as the channel length is made smaller and up to 45 nm. In contrast, compound semiconductor-based devices take advantages of their intrinsic material properties and offer superior device performance in high-frequency applications such as monolithic microwave integrated circuits (MMICs). The III-V semiconductor industries have also increased their production yield and integration scale in response to the increasing demand of RF circuits in terrestrial and mobile wireless communications.

Chapter Contents:

• 1.1 Overview of III-V Compound Semiconductor Devices
• 1.2 RF/Microwave Device and Circuit CAD
• 1.3 Organization of This Book

Inspec keywords: III-V semiconductors; elemental semiconductors; silicon; frequency response

Other keywords: intrinsic material properties; high-frequency applications; frequency response improvement; integration scale; RF circuits; MMIC; III-V compound semiconductor devices; silicon-based semiconductor devices; monolithic microwave integrated circuits; production yield; semiconductor material systems; terrestrial communications; mobile wireless communications; III-V semiconductor industries

Subjects: II-VI and III-V semiconductors