This chapter givens an introduction to the theory of small signal GaAs MESFETs with particular emphasis on the models used to predict the FET gain and noise figure performance. Such calculations have led to better FET structures and geometries being introduced as a means to exploit the intrinsically superior properties of GaAs over Si. The properties of the dual-gate FET have also been covered in some depth as this particular type of device has proved itself to be especially useful in microwave circuit applications.

Chapter Contents:

• 2.1 Introduction
• 2.2 Materials for MESFETS
• 2.3 Operation Principles of the Schottky Barrier MESFETs
• 2.4 The Dual Gate FET
• 2.5 Conclusions
• 2.6 Bibliography

Inspec keywords: gallium arsenide; microwave field effect transistors; III-V semiconductors; amplification; Schottky gate field effect transistors

Other keywords: microwave circuit; FET gain; dual gate FET; noise figure; small signal FET theory

Subjects: Other field effect devices; Solid-state microwave circuits and devices