This chapter presents a brief introduction to field effect transistor structures, such as HEMT and MESFET, using either materials other than GaAs or different operating principles to improve the performance of or extend the useful frequency range of these three terminal solid state devices.

Chapter Contents:

• 11.1 Introduction
• 11.2 The lnP MESFET
• 11.3 The lnP MISFET
• 11.4 Ternary and Quaternary Compounds for MESFETs
• 11.5 Permeable Base Transistor
• 11.6 Ballistic Electron Transistors
• 11.7 Heterostructure Transistors
• 11.8 Traveling Wave FETs
• 11.9 Conclusions
• 11.10 Bibliography

Inspec keywords: gallium arsenide; microwave field effect transistors; high electron mobility transistors; Schottky gate field effect transistors; III-V semiconductors

Other keywords: GaAs; solid state devices; HEMT; field effect transistor structures; MESFET; microwave field effect transistors

Subjects: Solid-state microwave circuits and devices; Other field effect devices