In this chapter, focuses on the gate drive design in switch/switch-based DPT circuit for dynamic characterization of WBG devices, as shown in Figure 5.2. First, gate drive fundamentals and unique design considerations for WBG devices are presented. Second, key power device characteristic parameters used for gate drive design are highlighted, which are some of the characteristics already obtained in static characterization described in previous chapters. Third, detailed gate drive design is introduced based on the basic functional blocks. Finally, leveraging the gate drive design criteria, a case study based on a 1,200 V SiC MOSFET is given. It is noted that although gate drive illustrated in this chapter is for WBG device dynamic characterization, its basic theory and design consideration can be utilized for the gate drive design in actual WBG-based power electronics converters.

Chapter Contents:

• 5.1 Gate drive fundamentals
• 5.2 Gate drive-related key device characteristics
• 5.2.1 Gate drive design considering device static characteristics
• 5.2.2 Gate drive design considering device dynamic characteristics
• 5.3 Gate drive design
• 5.3.1 Signal isolator
• 5.3.2 Isolated power supply
• 5.3.3 Gate drive IC
• 5.3.4 Gate resistor
• 5.3.5 Decoupling capacitor
• 5.4 Case study
• 5.4.1 Signal isolator
• 5.4.2 Isolated power supply
• 5.4.3 Gate drive IC
• 5.4.4 Gate resistor
• 5.4.5 Decoupling capacitor
• 5.5 Summary
• References

Inspec keywords: power semiconductor devices; power convertors; elemental semiconductors; wide band gap semiconductors; power MOSFET; power amplifiers; integrated circuit design

Other keywords: WBG-based power electronics converters; silicon carbide MOSFET; gate drive design criteria; switch-based DPT circuit; WBG device dynamic characterization; switch circuit

Subjects: Semiconductor integrated circuit design, layout, modelling and testing; Insulated gate field effect transistors; Amplifiers; Power convertors and power supplies to apparatus; Elemental semiconductors