This chapter will describe the procedures and methodology for characterizing the equivalent capacitances of a WBG power device, including the individual capacitances between each electrical terminal of the device and the conventionally reported lumped capacitance parameters. These capacitances, often in the form of curves as functions of operating conditions, have inherent value in selecting an appropriate device for a given application, as well as creating accurate simulation models and interpreting dynamic characterization data.

Chapter Contents:

• 3.1 Fundamentals of C–V testing
• 3.2 Test equipment description
• 3.3 Test fixture selection/design and calibration
• 3.4 Output capacitance (Coss) characteristic
• 3.5 Input capacitance (Ciss) characteristic
• 3.6 Reverse transfer capacitance (Ciss) characteristic
• 3.7 Gate charge (Qg) characteristic
• 3.8 Calculation of Coss-related switching energies
• 3.9 Summary
• References

Inspec keywords: capacitance; wide band gap semiconductors

Other keywords: lumped capacitance parameters; WBG power device; junction capacitance characterization; equivalent capacitance characterization; dynamic characterization data interpretation; electrical terminal

Subjects: Semiconductor theory, materials and properties