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Pulsed static characterization

Pulsed static characterization

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Characterization of Wide Bandgap Power Semiconductor Devices — Recommend this title to your library

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The static I-V characteristics of a power device describe its behavior in steady-state. Pulsed I-V characterization is usually performed with a curve tracer to establish the on-resistance, maximum current capability, and maximum voltage capability of the device. Some of the static characteristics are also used to interpret later dynamic test results. While most of this procedure can be found in the user manual for the test equipment (i.e., curve tracer), the unique properties of WBG devices require special care and considerations that may be overlooked in such general instructions. This chapter will describe these considerations, the desired deliverables of static characterization, and the tests required to produce them.

Chapter Contents:

  • 2.1 Fundamentals of pulsed I–V testing
  • 2.2 Test equipment description
  • 2.3 Test fixture selection/design
  • 2.4 Junction temperature control
  • 2.5 Cryogenic device testing
  • 2.6 Pulse waveform timing
  • 2.7 Output (Id–Vds) characteristic
  • 2.8 Transfer (Id–Vvg) characteristic
  • 2.9 Gate current (Ig,ss–Vgs) characteristic
  • 2.10 Drain-source leakage (Id,off–Vds) characteristic
  • 2.11 Summary
  • References

Inspec keywords: wide band gap semiconductors; dynamic testing; semiconductor device testing; power semiconductor devices; test equipment

Other keywords: user manual; maximum voltage capability; maximum current capability; WBG devices; curve tracer; power device; dynamic test; test equipment; pulsed static characterization; pulsed I-V characterization

Subjects: Power semiconductor devices; Semiconductor device modelling, equivalent circuits, design and testing

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