Introduction
This book focuses on how to characterize the emerging wide bandgap (WBG) power semiconductor switching devices, including silicon carbide (SiC) and gallium nitride (GaN) devices. Power semiconductor switching devices are at the heart of modern power electronics converters. Today's commercial power semiconductor devices are still dominated by the mature and well-established silicon (Si) technology. Since the advent of Si thyristors in the 1950s, Si power semiconductor devices have gone through many generations of development in the last 60 years and are approaching material theoretical limitations in terms of blocking voltage, operation temperature, and conduction and switching characteristics. These intrinsic physical limits become a barrier to achieving higher performance power conversion.
Introduction, Page 1 of 2
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