Resonant gate drivers
The forward recovery of the diodes causes poor performance and high conduction loss in the multi-MHz resonant converters. A simple and efficient self-driven RGD is presented. A control stage comprised of a shutdown branch and an auxiliary switch is introduced to the RGD to block the circulating current and the lowimpedance path in the drive circuit, so that the gate voltage can achieve fast shutdown and buildup under ON-OFF operation to ensure fast transient response. Moreover, the proposed RGD generates a tunable d.c. bias to increase the peak gate voltage and extend the conduction time with the optimal RDS(on), so that the average RDS(on) and the associated conduction loss in the SR FET can be reduced. It also provides precise switching timing for the SR to minimize the body diode conduction loss. An isolated RGD for two MOSFETs in one bridge-leg is presented. The proposed RGD can provide two complementary drive signals to drive two MOSFETs, which can be used to drive the HB leg in FB converters. Moreover, with the negative drive voltage capability, the proposed RGD ensures high reliability in the FB converters over the previously proposed RGDs.
Resonant gate drivers, Page 1 of 2
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