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The MOSFET-C technique

The MOSFET-C technique

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Design of High Frequency Integrated Analogue Filters — Recommend this title to your library

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The MOSFET-C method for fully integrated filters is a mature and proven design technique. Over the last 14 years, it has been used in high dynamic-range, continuous-time, large-volume applications at low and medium frequencies, and recently at frequencies above 100 MHz. The traditional strength of this method has been its capabilities for best power efficiency and best dynamic-range realisations among all integrated continuous-time filters. Conventional and new theoretical support explaining this performance has been presented in detail. The next generation MOSFET-C filters will cover increasingly higher frequencies. Clear experimental and theoretical evidence shows that an extension of this technique to frequencies approaching 1 GHz is within reach. The crucial IC technology advancement enabling this development is the advent of very high speed, inexpensive BiCMOS. The MOSFET-C method is ideally suited for this technology. It uses MOS transistors for obtaining tuned analogue cells with the largest possible on-chip dynamic range for a given power dissipation, and bipolar transistors for obtaining amplifiers with the largest possible on-chip gain-bandwidth product.

Inspec keywords: UHF field effect transistors; BiCMOS integrated circuits; UHF integrated circuits; MOSFET; UHF filters

Other keywords: bipolar transistors; power efficiency; high frequency filters; on-chip gain-bandwidth product; analogue cells; next generation MOSFET-C filters; integrated continuous-time filters; IC technology; BiCMOS integrated circuit; MOS transistors; power dissipation; amplifier; MOSFET-C technique; frequency 1 GHz

Subjects: Insulated gate field effect transistors

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