In this chapter, the formation and characterization of silicides (using Pt, Pd, Ir and Ti on SiGe and SiGeC) using various analytical tools such as x ray diffraction, Rutherford backscattering and Auger electron spectroscopy will be discussed. We describe Schottky barrier diodes using Ti, Pt and Pd on p-type SiGe, SiGeC, strained Si and GeC films. Experimental results on barrier heights, ideality factor and energy distribution of the interface state density for various diodes and simulation results on forward current-voltage characteristics of Schottky diodes on strained Si are presented.

Inspec keywords: Schottky barriers; semiconductor device metallisation; titanium; platinum; interface states; Ge-Si alloys; Rutherford backscattering; iridium; X-ray diffraction; palladium

Other keywords: barrier height; energy distribution; Ir; interface state density; Rutherford backscattering; Schottky barrier diode; silicides; Pt; SiGeC; Ti; contact metallization; Pd; X-ray diffraction; ideality factor; Auger electron spectroscopy; strained layers

Subjects: Metallisation and interconnection technology