In this chapter, an overview of the concept of modulation doping, reported results for SiGe channel p-MODFETs, strained Si nand p-MOSFETs and MODFETs will be presented. Issues related to material growth and the electrical transport properties of both electrons and holes in strained Si have been discussed in Chapters 2 and 3. This chapter will also cover the technology of fabrication of MODFETs and HMOSFETs with strained Si, strained Ge and strained SiGe channels, the performances attained and possible applications. The state-of-the-art proposed HCMOS is also presented in this chapter.

Inspec keywords: high electron mobility transistors; electron mobility; CMOS integrated circuits; Ge-Si alloys; MOSFET; hole mobility; semiconductor doping

Other keywords: electron transport; HMOSFET; modulation doping; GeSi; HCMOS; MODFET; electrical transport; hole transport; fabrication technology

Subjects: Other field effect devices