RTDs and BICFETs are discussed in this chapter. Although many other devices have been reported using SiGe strained layers, the work that has been done is not extensive and their performances have not yet reached a high level.

Inspec keywords: Ge-Si alloys; bipolar transistors; field effect transistors; semiconductor materials; resonant tunnelling diodes

Other keywords: optoelectronic devices; RTD; resonant tunnel diodes; bipolar inversion channel FET; SiGe; BICFET

Subjects: Other field effect devices