In this chapter, a review of the present status of the fabrication and characterization of Si HFETs in the Si/SiGe and SiGeC material systems is presented. Heterojunction MOSFETs may use a strained SiGe/SiGeC channel or strained Si or strained Ge channel. The substrate for a compressively (tensilely) strained channel would have a lower (larger) lattice constant. The channels may lie on the surface or be buried. The other freedom is to use a vertical channel. The choice of the cap layer for a buried SiGe channel is an important issue having bearing on the performance of the device. A brief discussion of design considerations is given.

Inspec keywords: silicon; Ge-Si alloys; MOSFET; elemental semiconductors; lattice constants; semiconductor heterojunctions; high electron mobility transistors

Other keywords: buried channel; Si-SiGeC; review; Si-SiGe; heterostructure field effect transistors; cap layer; strained channel; lattice constant; HFET; heterojunction MOSFET

Subjects: Other field effect devices