In a physical device the mobility of prime concern is drift mobility which for the bulk is measured typically by a time-of-flight method. Hall mobility provides an indirect estimate of the mobility behavior and is often a good indicator. Mobility in an actual MOS device is inferred indirectly from the current-voltage relation. Experimental results of electron and hole mobility in strained Si, SiGe and SiGeC are discussed and compared with predictions from simulation.

Inspec keywords: electron mobility; MIS devices; germanium compounds; silicon; hole mobility; elemental semiconductors; Ge-Si alloys; Hall mobility

Other keywords: alloy layers; electron mobility; time-of-flight method; current-voltage relation; drift mobility; MOS device; hole mobility; Hall mobility

Subjects: Electrical properties of elemental semiconductors (thin films, low-dimensional and nanoscale structures)