In a physical device the mobility of prime concern is drift mobility which for the bulk is measured typically by a time-of-flight method. Hall mobility provides an indirect estimate of the mobility behavior and is often a good indicator. Mobility in an actual MOS device is inferred indirectly from the current-voltage relation. Experimental results of electron and hole mobility in strained Si, SiGe and SiGeC are discussed and compared with predictions from simulation.
Electronic Properties of Alloy Layers, Page 1 of 2
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