Introduction
In this chapter, the development of different semiconductor devices such as bipolar junction transistors (BJTs), junction field effect transistors (FETs), metal oxide semiconductor field effect transistors (MOSFETs) etc using different semiconductor materias are discused. Electron devices employing heterojunctions are first demonstrated in III-V material systems such as AlGaAs-GaAs or InGaAs-InP which are lattice matched. GaAs diodes found applications as varactors, Gunn diodes and impact ionization avalanche transit time diodes (IMPATTs). The GaAs metal semiconductor field effect transistor (MESFET) is the first III-V compound semiconductor transistor. Meanwhile ternary compounds are developed and heterostructure diodes were fabricated which found a phenomenal success in diode lasers.
Introduction, Page 1 of 2
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