In this chapter, the development of different semiconductor devices such as bipolar junction transistors (BJTs), junction field effect transistors (FETs), metal oxide semiconductor field effect transistors (MOSFETs) etc using different semiconductor materias are discused. Electron devices employing heterojunctions are first demonstrated in III-V material systems such as AlGaAs-GaAs or InGaAs-InP which are lattice matched. GaAs diodes found applications as varactors, Gunn diodes and impact ionization avalanche transit time diodes (IMPATTs). The GaAs metal semiconductor field effect transistor (MESFET) is the first III-V compound semiconductor transistor. Meanwhile ternary compounds are developed and heterostructure diodes were fabricated which found a phenomenal success in diode lasers.

Inspec keywords: heterojunction bipolar transistors; semiconductor heterojunctions; MOSFET; III-V semiconductors; elemental semiconductors; gallium arsenide; Schottky gate field effect transistors; aluminium compounds; high electron mobility transistors; indium compounds; Gunn diodes; silicon; IMPATT diodes

Other keywords: MOSFET; diode lasers; varactors; MESFET; metal oxide semiconductor field effect transistors; strained silicon heterostructures; III-V compound semiconductor transistor; InGaAs-InP; impact ionization avalanche transit time diodes; AlGaAs-GaAs; Si; heterostructure diodes; ternary compounds; bipolar junction transistors; electron devices; metal semiconductor field effect transistor; Gunn diodes; IMPATT; junction field effect transistors

Subjects: Semiconductor devices