In this chapter, we present an overview of trends and progress made in group-IV heterostructures for optoelectronics. Topics will include devices demonstrated using SiGe, SiGeC (an alloy that can be lattice matched to Si), and direct bandgap, strained heterostructures of GeSn upon SiGe/Si. We shall focus on monolithic optoelectronic integration, a technique that promises low cost, reliable, high performance silicon-based optoelectronic integrated circuits (OEICs). In general, OEICs contain both passive guided-wave components, such as bends, splitters, couplers, and detectors, and active or controlled elements such as laser diodes, routers, switches and modulators.
Si/SiGe Optoelectronics, Page 1 of 2
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