In this chapter, we present an overview of trends and progress made in group-IV heterostructures for optoelectronics. Topics will include devices demonstrated using SiGe, SiGeC (an alloy that can be lattice matched to Si), and direct bandgap, strained heterostructures of GeSn upon SiGe/Si. We shall focus on monolithic optoelectronic integration, a technique that promises low cost, reliable, high performance silicon-based optoelectronic integrated circuits (OEICs). In general, OEICs contain both passive guided-wave components, such as bends, splitters, couplers, and detectors, and active or controlled elements such as laser diodes, routers, switches and modulators.

Inspec keywords: phototransistors; elemental semiconductors; Ge-Si alloys; integrated optoelectronics; p-i-n photodiodes; semiconductor heterojunctions; silicon; avalanche photodiodes; photodetectors

Other keywords: optoelectronics; group-IV heterostructures; OEIC; monolithic optoelectronic integration; Si-SiGe; strained heterostructures; overview; passive guided-wave components; direct bandgap heterostructures; silicon-based optoelectronic integrated circuits

Subjects: Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection)