Modelling and characterisation of GaAs devices

Modelling and characterisation of GaAs devices

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This chapter describes various III-V semiconductor FET characterisation and modelling techniques. Two new techniques for implementing large-signal models in SPICE have permitted the development of a new MESFET model, which is not only realistic but also runs more quickly. These techniques address continuity for distortion and intermodulation analysis, and rate-dependent and thermal transient behaviour. The model has accuracy extended over a range of operating conditions that is obtained by inclusion of secondary aspects of device operation. Accuracy is obtained with improved device characterisation to fit behavioural trends of device operation. In many applications this is more important than simply fitting traditional I-V and S-parameter measurements (see for instance Chapter 24). Fast, large-signal pulse measurements are considered as more suitable for characterising devices.

Inspec keywords: gallium arsenide; III-V semiconductors; field effect transistors; semiconductor device models

Other keywords: GaAs; semiconductor device modelling techniques; semiconductor FET characterisation; intermodulation analysis; SPICE; thermal transient behaviour

Subjects: Insulated gate field effect transistors

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