Radiation effects on ICs and a mixed analog CMOS-NPN-PJFET-on-insulator technology

Radiation effects on ICs and a mixed analog CMOS-NPN-PJFET-on-insulator technology

For access to this article, please select a purchase option:

Buy chapter PDF
(plus tax if applicable)
Buy Knowledge Pack
10 chapters for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Low-power HF Microelectronics: a unified approach — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The goal of this chapter is to provide insight into the radiation effects involved in space and high energy physics environments. These environments can cause significant damage to spacecraft or detector electronics. They can cause degradation through total-dose ionising radiation damage, single event related soft and hard errors, and displacement damage. Sensitivity and performance of commercial technologies have been discussed with respect to Silicon-On-Insulator (SOI) for these radiative environments. Description and results of an SOI technology called DMILL have been also reported. DMILL technology is expected to fulfil the constraints of high energy physics electronics and could be of interest in other fields, such as space, military, and nuclear power applications, where radiation tolerant integrated circuits are required. Other potentialities for this SOI technology are its use in communication applications due to its high transistor performance, or in micromachining for sensor readout on the same chip. Therefore, we think that both device and circuit designers will find this an interesting development area, and a good example of process-device-design interaction for the manufacturability of microsystems.

Inspec keywords: CMOS integrated circuits; radiation effects; silicon-on-insulator; junction gate field effect transistors

Other keywords: detector electronics; microsystem manufacturability; IC radiation effects; sensor readout micromachining; SOI technology; high energy physic electronics; mixed analog CMOS-NPN-PJFET-on-insulator technology; silicon-on-insulator; total-dose ionising radiation damage; radiation tolerant integrated circuits; spacecraft; process-device-design interaction; nuclear power; DMILL technology

Subjects: CMOS integrated circuits

Preview this chapter:
Zoom in

Radiation effects on ICs and a mixed analog CMOS-NPN-PJFET-on-insulator technology, Page 1 of 2

| /docserver/preview/fulltext/books/cs/pbcs008e/PBCS008E_ch5-1.gif /docserver/preview/fulltext/books/cs/pbcs008e/PBCS008E_ch5-2.gif

Related content

This is a required field
Please enter a valid email address