Inspec keywords: grain boundaries; phase change memories; integrated circuit reliability

Other keywords: material properties; wire size function; programmed resistance levels; nanocrossbars; phase change memory; high-programmed low-resistive state; connecting wire electrical resistivity; power loss; programming duration; PCM cells; nanoscale grain boundaries; surface scattering effects; energy drop; programmed reliability issue; connecting wire resistance effect; cell position; feature size; nanocrossbar size; wire resistance effect modelling; PCM-based nanocrossbar memory; energy consumption; PCM-based passive nanocrossbar

Subjects: Semiconductor storage; Reliability; Memory circuits