Inspec keywords: Schottky diodes; silicon; sensors; elemental semiconductors; MOSFET

Other keywords: Si; temperature -50 degC to 120 degC; physical model; I-V characteristics; voltage 0.6 V; zero temperature coefficient point; AMI process; MOSFET; metal-oxide-semiconductor field-effective transistors; size 0.5 mum; low ZTC-point-bias-voltages; temperature characteristics; N-type Schottky barrier diodes; low-voltage sensing applications

Subjects: Junction and barrier diodes; Sensing devices and transducers; Insulated gate field effect transistors