Inspec keywords: epitaxial layers; III-V semiconductors; high electron mobility transistors; frequency response; indium compounds; microwave transistors

Other keywords: parasitic delay; frequency 421 GHz; high electron mobility transistors; voltage 0.7 V; frequency 620 GHz; extrinsic gate capacitances; size 200 mm; frequency 1 THz; InAs-InP; high frequency response; size 100 mm; carrier transport; PHEMT; voltage 0.5 V

Subjects: Solid-state microwave circuits and devices; Other field effect devices