Inspec keywords: semiconductor device models; light scattering; UHF field effect transistors; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; III-V semiconductors; optical noise

Other keywords: continuous wave light exposure; noise temperature circuit model; HEMT; intrinsic noise source parameter; high-electron-mobility transistor; Kr coefficient; Kc coefficient; Kg coefficient; size 0.25 mum; light noise activation; linear scattering; frequency 2 GHz to 18 GHz; DC characteristics; GaAs; size 100 mum to 300 mum

Subjects: Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing; Solid-state microwave circuits and devices